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BU999 Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited

Il numero della parte BU999
Spiegazioni elettronici  isc Silicon NPN Power Transistor
PDF  2 Pages
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Produttore elettronici  ISC [Inchange Semiconductor Company Limited]
Homepage  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BU999 Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited

  BU999 Datasheet HTML 1Page - Inchange Semiconductor Company Limited BU999 Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BU999
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 50mA; IB= 0
140
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 10A; IB= 1A
0.8
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= 25A; IB= 2.5A
1.5
V
VBE(sat)-1
Base-Emitter Saturation Voltage
IC= 10A; IB= 1A
1.8
V
VBE(sat)-2
Base-Emitter Saturation Voltage
IC= 25A; IB= 2.5A
2.5
V
VBE(on)
Base -Emitter On Voltage
IC= 10A; VCE= 2V
1.8
V
ICEX
Collector Cutoff Current
VCE= 140V; VBE= -1.5V
10
μA
ICBO
Collector Cutoff Current
VCB= 160V; IE= 0
100
μA
ICEO
Collector Cutoff Current
VCE= 70V; IB= 0
B
50
μA
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
100
μA
hFE-1
DC Current Gain
IC= 0.5A; VCE= 2V
35
hFE-2
DC Current Gain
IC= 10A; VCE= 2V
25
100
hFE-3
DC Current Gain
IC= 25A; VCE= 2V
12
Switching times
ton
Turn-on Time
0.3
μs
tstg
Storage Time
1.5
μs
tf
Fall Time
IC= 10A, IB1= -IB2= 1A,
VCC= 80V
0.25
μs
isc Website：www.iscsemi.cn
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