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GL05T Scheda tecnica(PDF) 2 Page - Vishay Siliconix |
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GL05T Scheda tecnica(HTML) 2 Page - Vishay Siliconix |
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2 / 6 page ![]() GL05T to GL24T www.vishay.com Vishay Semiconductors Rev. 1.8, 09-Jun-11 2 Document Number: 85809 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 ABSOLUTE MAXIMUM RATINGS GL05T PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT Peak pulse current 8/20 μs IPPM 17 A Peak pulse power 8/20 μs waveform PPP 300 W ESD immunity Contact discharge acc. IEC 61000-4-2; 10 pulses VESD ± 8 kV Air discharge acc. IEC 61000-4-2; 10 pulses ± 15 kV Operating temperature Junction temperature TJ - 55 to + 125 °C Storage temperature TSTG - 55 to + 150 °C ABSOLUTE MAXIMUM RATINGS GL12T PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT Peak pulse current 8/20 μs IPPM 12 A Peak pulse power 8/20 μs waveform PPP 300 W ESD immunity Contact discharge acc. IEC 61000-4-2; 10 pulses VESD ± 8 kV Air discharge acc. IEC 61000-4-2; 10 pulses ± 15 kV Operating temperature Junction temperature TJ - 55 to + 125 °C Storage temperature TSTG - 55 to + 150 °C ABSOLUTE MAXIMUM RATINGS GL15T PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT Peak pulse current 8/20 μs IPPM 10 A Peak pulse power 8/20 μs waveform PPP 300 W ESD immunity Contact discharge acc. IEC 61000-4-2; 10 pulses VESD ± 8 kV Air discharge acc. IEC 61000-4-2; 10 pulses ± 15 kV Operating temperature Junction temperature TJ - 55 to + 125 °C Storage temperature TSTG - 55 to + 150 °C ABSOLUTE MAXIMUM RATINGS GL24T PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT Peak pulse current 8/20 μs IPPM 5A Peak pulse power 8/20 μs waveform PPP 300 W ESD immunity Contact discharge acc. IEC 61000-4-2; 10 pulses VESD ± 8 kV Air discharge acc. IEC 61000-4-2; 10 pulses ± 15 kV Operating temperature Junction temperature TJ - 55 to + 125 °C Storage temperature TSTG - 55 to + 150 °C ELECTRICAL CHARACTERISTICS GL05T PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Protection paths Number of lines which can be protected Nchannel --- lines Reverse stand-off voltage at IR = 1 μA VRWM -- 5 V Reverse current at VR = 5 V IR - - 20 μA Reverse breakdown voltage at IR = 1 mA VBR 6- - V Reverse clamping voltage at IPP = 1 A VC -- 9.8 V at IPP = 5 A - - 11 V Capacitance at VR = 0 V; f = 1 MHz CD -5- pF |
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