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BU2525DF Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BU2525DF Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page ![]() Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU2525DF DESCRIPTION ・With TO-3PFa package ・High voltage ・High speed switching ・Built-in damper diode APPLICATIONS ・For use in horizontal deflection circuits of large screen colour TV receivers PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 7.5 A IC Collector current (DC) 12 A ICM Collector current -peak 30 A IB Base Collector current (DC) 8 A IBM Base current -peak 12 A Ptot Total power dissipation TC=25℃ 45 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ |
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