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BUL310 Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BUL310 Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page ![]() Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUL310 DESCRIPTION ・ ・With TO-220C package ・High voltage,high speed ・Wide area of safe operation APPLICATIONS ・Electronic ballasts for fluorescent lighting ・Switch mode power supplies ・Flyback and forward single transistor low power converters PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1000 V VCEO Collector-emitter voltage Open base 500 V VEBO Emitter-base voltage Open collector 9 V IC Collector current (DC) 5 A ICM Collector current-Peak tp<5ms 10 A IB Base current (DC) 3 A IBM Base current-Peak tp<5ms 4 A Ptot Total power dissipation TC=25℃ 75 W Tj Maximum operating junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-case Thermal resistance junction to case 1.65 ℃/W |
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