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BUS11 Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BUS11 Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BUS11/A DESCRIPTION ·High Switching Speed ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min)-BUS11 450V (Min)-BUS11A APPLICATIONS ·Designed for use in converters, inverters, switching regulators, motor control systems etc. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT BUS11 850 VCES Collector- Emitter Voltage(VBE= 0) BUS11A 1000 V BUS11 400 VCEO Collector-Emitter Voltage BUS11A 450 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A IB B Base Current 2 A IBM Base Current-Peak 4 A PC Collector Power Dissipation @TC=25℃ 100 W Tj Junction Temperature 200 ℃ Tstg Storage Temperature Range -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.75 ℃/W isc Website:www.iscsemi.cn |
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