BUV23 datasheet(1/3 Pages) ISC

Il numero della parte	BUV23

Spiegazioni elettronici	Silicon NPN Power Transistors

PDF	3 Pages

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Produttore elettronici	ISC [Inchange Semiconductor Company Limited]

Homepage	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

BUV23

DESCRIPTION

・

・With TO-3 package

・High DC current gain

・Very fast switching times

・Low collector saturation voltage

APPLICATIONS

・Designed for high current,high speed

and high power application.

PINNING(see fig.2)

DESCRIPTION

1

Base

2

Emitter

3

Collector

Absolute maximum ratings (Tc=25℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

VCBO

Collector-base voltage

Open emitter

400

V

VCEO

Collector-emitter voltage

Open base

325

V

VEBO

Emitter-base voltage

Open collector

7

V

IC

Collector current

30

A

ICM

Collector current-peak

40

A

IB

Base current

6

A

PT

Total power dissipation

TC=25℃

250

W

Tj

Junction temperature

-65~200

℃

Tstg

Storage temperature

-65~200

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-C

Thermal resistance junction to case

0.7

℃/W

Fig.1 simplified outline (TO-3) and symbol

Codice articolo simile - BUV23

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
Motorola, Inc	BUV23	139Kb / 4P	30 AMPERES NPN SILICON POWER METAL TRANSISTOR 325 VOLTS 250 WATTS
Savantic, Inc.	BUV23	119Kb / 3P	Silicon NPN Power Transistors
Comset Semiconductor	BUV23	204Kb / 2P	POWER SWITCH APPLICATIONS
Seme LAB	BUV23	15Kb / 1P	Bipolar NPN Device in a Hermetically sealed TO3
Comset Semiconductor	BUV23	204Kb / 2P	POWER SWITCH APPLICATIONS

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Descrizione simile - BUV23

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
Motorola, Inc	BUS47	79Kb / 2P	NPN SILICON POWER TRANSISTORS
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BUV23 Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited

BUV23 Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited

Codice articolo simile - BUV23

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