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BUV27 Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BUV27 Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors BUV27 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.2 A ;IB=0;L=25mH 120 V V(BR)EBO Emitter-base breakdown voltage IE=50mA; IC=0 7 30 V VCEsat-1 Collector-emitter saturation voltage IC=4A ;IB=0.4 A 0.7 V VCEsat-2 Collector-emitter saturation voltage IC=8A; IB=0.8A 1.5 V VBEsat Base-emitter saturation voltage IC=8A; IB=0.8A 2 V ICEX Collector cut-off current VCE =240V;VBE = -1.5 V TC=125℃ 1 mA IEBO Emitter cut-off current VEB=5V; IC=0 1 mA Switching times resistive load ton Turn-on time 0.4 0.8 ms ts Storage time 0.5 1.2 μs tf Fall time IC=8A;IB1=0.8A;VCC=90V VBE = - 6V;RBB = 3.75Ω 0.12 0.25 μs |
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