BUV47 datasheet(1/3 Pages) ISC

Il numero della parte	BUV47

Spiegazioni elettronici	Silicon NPN Power Transistors

PDF	3 Pages

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Produttore elettronici	ISC [Inchange Semiconductor Company Limited]

Homepage	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

BUV47 BUV47B

DESCRIPTION

・With TO-3PN package.

・High voltage.

・Very high switching speed.

APPLICATIONS

・Suited for 220V switchmode power supply,

DC and AC motor control.

PINNING

DESCRIPTION

1

Base

2

Collector;connected to

mounting base

3

Emitter

Absolute maximum ratings (Ta=25℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

VCBO

Collector-base voltage

Open emitter

850

V

VCEO

Collector-emitter voltage

Open base

400

V

VEBO

Emitter-base voltage

Open collector

7

V

IC

Collector current

9

A

ICM

Collector current-peak

15

A

IB

Base current

3

A

PC

Collector power dissipation

TC=25℃

90

W

Tj

Junction temperature

-65~150

℃

Tstg

Storage temperature

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-case

Thermal resistance junction case

1.38

℃/W

Fig.1 simplified outline (TO-3PN) and symbol

Codice articolo simile - BUV47

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
Mospec Semiconductor	BUV47	120Kb / 3P	POWER TRANSISTORS(9A,400V,90W)
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Motorola, Inc	BUS47	79Kb / 2P	NPN SILICON POWER TRANSISTORS
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BUV47 Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited

BUV47 Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited

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