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BUW13A Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BUW13A Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page ![]() Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUW13 BUW13A DESCRIPTION ・With TO-3PN package ・High voltage,high speed APPLICATIONS ・Converters ・Inverters ・Switching regulators ・Motor control systems PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT BUW13 850 VCBO Collector-base voltage BUW13A Open emitter 1000 V BUW13 400 VCEO Collector-emitter voltage BUW13A Open base 450 V VEBO Emitter-base voltage Open collector 9 V IC Collector current 15 A ICM Collector current-peak 30 A IB Base current 6 A IBM Base current-peak 9 A PT Total power dissipation TC=25℃ 175 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~175 ℃ Fig.1 simplified outline (TO-3PN) and symbol |
Codice articolo simile - BUW13A |
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