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BUW40 Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BUW40 Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BUW40/A/B isc Website:www.iscsemi.cn DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 300V(Min)- BUW40 = 350V(Min)- BUW40A = 400V(Min)- BUW40B ·High Switching Speed ·High Power Dissipation APPLICATIONS ·Designed for high voltage and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BUW40 450 BUW40A 550 VCEV Collector-Emitter Voltage VBE= -1.5V BUW40B 650 V BUW40 300 BUW40A 350 VCEO(SUS) Collector-Emitter Voltage BUW40B 400 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 1 A ICM Collector Current-Peak 2 A PC Collector Power Dissipation@TC=25℃ 40 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ |
Codice articolo simile - BUW40 |
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