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BUW41 Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BUW41 Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BUW41/A/B ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BUW41 300 BUW41A 350 VCEO(SUS) Collector-Emitter Sustaining Voltage BUW41B IC= 200mA ; IB= 0 400 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ; IC= 0 6 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A B IC= 5A; IB= 1A,T B C= 150℃ 1.0 2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1A B 1.6 V BUW41 VCE= 450V;VBE= -1.5V VCE= 450V;VBE= -1.5V,TC= 150℃ 0.1 1.0 BUW41A VCE= 550V;VBE= -1.5V VCE= 550V;VBE= -1.5V,TC= 150℃ 0.1 1.0 ICEV Collector Cutoff Current BUW41B VCE= 650V;VBE= -1.5V VCE= 650V;VBE= -1.5V,TC= 150℃ 0.1 1.0 mA IEBO Emitter Cutoff Current VEB= 6V; IC=0 1.0 mA hFE DC Current Gain IC= 5A ; VCE= 3V 10 fT Current-Gain—Bandwidth Product IC= 0.5A ;VCE= 10V 15 MHz isc Website:www.iscsemi.cn 2 |
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