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BUX47 Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BUX47 Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors BUX47 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A; IB=0;L=25mH 400 V V(BR)EBO Emitter-base breakdown voltage IE=50mA; IC=0; 7 30 V VCEsat-1 Collector-emitter saturation voltage IC=6A;IB=1.2 A 1.5 V VCEsat-2 Collector-emitter saturation voltage IC=9A;IB=3 A 3 V VBEsat Base-emitter saturation voltage IC=6A;IB=1.2 A 1.6 V ICEV Collector cut-off current VCE=850V;VBE=-2.5V TC=125℃ 0.15 1.5 mA IEBO Emitter cut-off current VEB=5V;IC=0 1 mA hFE DC current gain IC=1A ;VCE=5V 15 50 Switching times Ton Turn-on time 0.8 μs ts Storage time 2.5 μs tf Fall time IC=6A;IB1=-IB2=1.2A; VCC=150V 0.8 μs |
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