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D44H10 Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited |
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D44H10 Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page ![]() Inchange Semiconductor Product Specification Silicon NPN Power Transistors D44H10 DESCRIPTION ・ ・With TO-220C package ・Fast switching speeds ・Low collector saturation voltage APPLICATIONS ・For general purpose power amplification and switching regulators,converters and power amplifiers applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings (Tc=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 80 V VCEO Collector-emitter voltage Open base 80 V VEBO Emitter-base voltage Open collector 5 V IC Collector current (DC) 10 A ICM Collector current-Peak 20 A TC=25℃ 50 PD Total power dissipation Ta=25℃ 1.67 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-C Thermal resistance from junction to case 2.5 ℃/W |
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