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MJ3000 Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited |
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MJ3000 Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page ![]() Inchange Semiconductor Product Specification Silicon NPN Power Transistors MJ3000/3001 DESCRIPTION ・With TO-3 package ・DARLINGTON ・High DC current gain ・Complement to type MJ2500/2501 APPLICATIONS ・For use as output devices in complementary general purpose amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT MJ3000 60 VCBO Collector-base voltage MJ3001 Open emitter 80 V MJ3000 60 VCEO Collector-emitter voltage MJ3001 Open base 80 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 10 A IB Base current 0.2 A PD Total power dissipation TC=25℃ 150 W Tj Junction temperature 200 ℃ Tstg Storage temperature -55~200 ℃ Fig.1 simplified outline (TO-3) and symbol |
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