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MJ4031 Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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MJ4031 Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlingtion Power Transistor MJ4031 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCEO Collector-Emitter Breakdown Voltage IC=-100mA; IB= 0 B -80 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC=-10A; IB=-40mA -2.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC=-16A; IB=-80mA -4 V VBE(sat) Base-Emitter Saturation Voltage IC=-5A; IB=-400mA -3 V VBE(on) Base-Emitter On voltage IC=-10A ; VCE=-3V -3 V ICER Collector Cutoff Current VCB=-80V; RBE= 1KΩ; VCB=-80V; RBE= 1KΩ; TC= 150℃ -1 -5 mA ICEO Collector Cutoff current VCE=-40V; IB=0 -3 mA IEBO Emitter Cut-off current VEB=-5V; IC= 0 -5 mA hFE DC Current Gain IC=-10A ; VCE=-3V 1000 isc Website:www.iscsemi.cn 2 |
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