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MJ12002 Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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MJ12002 Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ12002 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC=50mA ; IB=0 B 750 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 1.8A B 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 1.8A B 1.5 V ICES Collector Cutoff Current VCE= 1500V; VBE= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC=0 0.1 mA hFE DC Current Gain IC= 0.5A ; VCE= 5V 10.5 fT Current-Gain—Bandwidth Product IC= 0.1A; VCE= 5V; ftest=1.0MHz 4 MHz COB Output Capacitance IE= 0; VCB= 10V; ftest=0.1MHz 50 pF tf Fall Time IC= 2A , IB1= 1A; LB= 12μH B 0.65 1.0 μs isc Website:www.iscsemi.cn 2 |
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