MJE15032 datasheet(1/2 Pages) ISC

Il numero della parte	MJE15032

Spiegazioni elettronici	isc Silicon NPN Power Transistor

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Produttore elettronici	ISC [Inchange Semiconductor Company Limited]

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INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

MJE15032

DESCRIPTION

·Collector-Emitter Sustaining Voltage-

: VCEO(SUS)= 250V(Min)

·DC current gain -

: hFE = 50 (Min) @IC= 0.5 A

: hFE = 10 (Min) @IC= 2.0 A

·Complement to Type MJE15033

APPLICATIONS

·Designed for use as high–frequency drivers in audio

amplifiers.

ABSOLUTE MAXIMUM RATINGS (Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

250

V

VCEO

Collector-Emitter Voltage

250

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current -Continuous

8

A

ICM

Collector Current-Peak

16

A

IB

B

Base Current

2

A

Collector Power Dissipation

@Ta=25℃

2

PC

Collector Power Dissipation

@TC=25℃

50

W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

2.5

℃/W

Rth j-a

Thermal Resistance,Junction to Ambient

62.5

℃/W

isc Website：www.iscsemi.cn

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