PMD16K80 datasheet(1/3 Pages) ISC

Il numero della parte	PMD16K80

Spiegazioni elettronici	Silicon NPN Power Transistors

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Produttore elettronici	ISC [Inchange Semiconductor Company Limited]

Homepage	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

PMD16K60/80/100

DESCRIPTION

・With TO-3 package

・High DC current gain

・DARLINGTON

APPLICATIONS

・Designed for use in power switching

application.

PINNING (See Fig.2)

DESCRIPTION

1

Base

2

Emitter

3

Collector

Absolute maximum ratings(Ta=25℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

PMD16K60

60

PMD16K80

80

VCBO

Collector-base voltage

PMD16K100

Open emitter

100

V

PMD16K60

60

PMD16K80

80

VCEO

Collector-emitter voltage

PMD16K100

Open base

100

V

VEBO

Emitter-base voltage

Open collector

5

V

IC

Collector current

20

A

ICM

Collector current(peak)

40

A

IB

Base current

0.5

A

PD

Power dissipation

TC=25℃

200

W

Tj

Max. operating Junction temperature

200

℃

Tstg

Storage temperature

-65~200

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal resistance from junction to case

0.875

℃/W

Fig.1 simplified outline (TO-3) and symbol

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