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SIR862DP Scheda tecnica(PDF) 3 Page - Vishay Siliconix

Il numero della parte SIR862DP
Spiegazioni elettronici  N-Channel 25-V (D-S) MOSFET
PDF  7 Pages
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Produttore elettronici  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SIR862DP Scheda tecnica(HTML) 3 Page - Vishay Siliconix

  SIR862DP Datasheet HTML 1Page - Vishay Siliconix SIR862DP Datasheet HTML 2Page - Vishay Siliconix SIR862DP Datasheet HTML 3Page - Vishay Siliconix SIR862DP Datasheet HTML 4Page - Vishay Siliconix SIR862DP Datasheet HTML 5Page - Vishay Siliconix SIR862DP Datasheet HTML 6Page - Vishay Siliconix SIR862DP Datasheet HTML 7Page - Vishay Siliconix  
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Document Number: 65672
S10-0041-Rev. A, 11-Jan-10
www.vishay.com
3
Vishay Siliconix
SiR862DP
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
Gate Charge
0
14
28
42
56
70
0.0
0.5
1.0
1.5
2.0
2.5
V
DS - Drain-to-Source Voltage (V)
V
GS =10 V thru 3 V
V
GS =2 V
0.0020
0.0022
0.0024
0.0026
0.0028
0.0030
014
28
42
56
70
I
D - Drain Current (A)
V
GS =4.5 V
V
GS =10 V
0
2
4
6
8
10
0
13263952
65
Q
g - TotalGateCharge (nC)
I
D =10A
V
DS =5 V
V
DS =10 V
V
DS =15 V
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
2
4
6
8
10
0
1234
5
V
GS -Gate-to-Source Voltage (V)
T
C = 125 °C
T
C = - 55 °C
T
C = 25 °C
C
rss
0
920
1840
2760
3680
4600
0
5
10
15
20
25
V
DS - Drain-to-Source Voltage (V)
C
iss
C
oss
0.6
0.8
1.0
1.2
1.4
1.6
- 50
- 25
0
25
50
75
100
125
150
T
J - JunctionTemperature (°C)
I
D =10A
V
GS =10 V
V
GS =4.5 V



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