UG30DPT datasheet(2/4 Pages) VISHAY

2 / 4 page

UG30APT thru UG30DPT

Vishay General Semiconductor

www.vishay.com

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

Document Number: 88762

Revision: 05-Jun-08

Note:

(1) Thermal resistance from junction to case per diode mounted on heatsink

RATINGS AND CHARACTERISTICS CURVES

(TA = 25 °C unless otherwise noted)

Maximum reverse

recovery time

IF = 0.5 A, IR = 1.0 A,

Irr = 0.25 A

trr

Maximum reverse

recovery time

IF = 15 A, VR = 30 V,

dI/dt = 50 A/µs,

IRR = 10 % IRM

TJ = 25 °C

TJ = 100 °C

trr

Maximum recovered

stored charge

IF = 15 A, VR = 30 V,

dI/dt = 50 A/µs,

IRR = 10 % IRM

TJ = 25 °C

TJ = 100 °C

Qrr

Typical junction

capacitance

4.0 V, 1 MHz

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS

SYMBOL

UG30APT

UG30BPT

UG30CPT

UG30DPT

UNIT

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

UG30APT

UG30BPT

UG30CPT

UG30DPT

UNIT

Typical thermal resistance per diode (1)

RθJC

2.0

°C/W

ORDERING INFORMATION (Example)

PACKAGE

PREFERRED P/N

UNIT WEIGHT (g)

PACKAGE CODE

BASE QUANTITY

DELIVERY MODE

TO-247AD

UG30DPT-E3/45

6.15

30/tube

Tube

Figure 1. Maximum Forward Current Derating Curve

100

125

150

175

Case Temperature (°C)

Resistive or Inductive Load

Figure 2. Maximum Non-Repetitive Peak Forward Surge Current

Per Diode

100

1000

Number of Cycles at 60 Hz

C = 120 °C

8.3 ms Single Half Sine-Wave

UG30DPT Scheda tecnica(PDF) 2 Page - Vishay Siliconix

UG30DPT Scheda tecnica(HTML) 2 Page - Vishay Siliconix

Html Pages

1 2 3 4

Scheda tecnica Scarica

Link URL