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Features

■ High ruggedness

■ R

■ Gate Charge (Typ 25nC)

■ Improved dv/dt Capability

■ 100% Avalanche Tested

General Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

This technology enable power MOSFET to have better characteristics, such as fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics. This power MOSFET is usually used at high efficient DC to DC converter

block and switch mode power supply.

N-channel MOSFET

Absolute maximum ratings

Symbol

Parameter

Value

Unit

V

DSS

Drain to Source Voltage

600

V

I

D

Continuous Drain Current (@T

4.0

A

Continuous Drain Current (@T

2.2

A

I

DM

Drain current pulsed

(note 1)

16

A

V

GS

Gate to Source Voltage

± 30

V

E

AS

Single pulsed Avalanche Energy

(note 2)

210

mJ

E

AR

Repetitive Avalanche Energy

(note 1)

10.6

mJ

dv/dt

Peak diode Recovery dv/dt

(note 3)

4.5

V/ns

P

D

Total power dissipation (@T

48

W

0.38

T

Operating Junction Temperature & Storage Temperature

-55 ~ + 150

T

L

Maximum Lead Temperature for soldering

purpose, 1/8 from Case for 5 seconds.

300

Thermal characteristics

Symbol

Parameter

Value

Unit

R

thjc

Thermal resistance, Junction to case

2.6

R

thcs

Thermal resistance, Case to Sink

0.5

R

thja

Thermal resistance, Junction to ambient

100

Dec. 2011. Rev. 1.0

1/7

*. Drain current is limited by junction temperature.

BV

I

D

: 4.0A

R

2

1. Gate 2. Drain 3. Source

TO-251

SW4N60V

SAMWIN

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2

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Order Codes

Item

Sales Type

Marking

Package

Packaging

1

SW I 4N60V

SW4N60V

TO-251

TUBE