TIP31 datasheet(2/2 Pages) SECOS

2 / 2 page

TIP31 / TIP31A / TIP31B / TIP31C

NPN Plastic-Encapsulate Transistor

Elektronische Bauelemente

19-Sep-2011 Rev. A

Page 2 of 2

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Collector - Base Breakdown

Voltage

TIP31

V(BR)CBO

IC=1mA, IE=0

TIP31A

TIP31B

TIP31C

100

Collector - Emitter

Breakdown Voltage

TIP31

V(BR)CEO

IC=30mA, IB=0

TIP31A

TIP31B

TIP31C

100

Emitter - Base Breakdown Voltage

V(BR)EBO

IE=1mA, IC=0

Collector Cut - Off Current

TIP31

ICBO

200

µA

VCB=40V, IE=0

TIP31A

VCB=60V, IE=0

TIP31B

VCB=80V, IE=0

TIP31C

VCB=100V, IE=0

Collector Cut-Off

Current

TIP31 / TIP31A

ICEO

0.3

VCE=30V, IB=0

TIP31B / TIP31C

VCE=60V, IB=0

Emitter Cut-Off Current

IEBO

VEB=5V, IC=0

DC Current Gain

hFE

VCE=4V, IC=1A

VCE=4V, IC=3A

Collector - Emitter Saturation Voltage

VCE(sat)

1.2

IC=3A, IB=0.375A

Base – Emitter Voltage

VBE

1.8

VCE=4V, IC=3A

Transition Frequency

f T

MHz

VCE=10V, IC=0.5A

Notes：

Pulse Test: PW≦300µs, Duty Cycle≦2%.

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