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Semiconductor Corp.

TM

TO-3 CASE - MECHANICAL OUTLINE

2N6383

2N6384

2N6385

NPN SILICON POWER

DARLINGTON TRANSISTOR

R1 (28-August 2008)

MARKING: FULL PART NUMBER

LEAD CODE:

1) Base

2) Emitter

C) Collector

ELECTRICAL CHARACTERISTICS - Continued: (TC=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

VCE(SAT)

IC=5.0A, IB=10mA

2.0

V

VCE(SAT)

IC=10A, IB=100mA

3.0

V

VBE(ON)

VCE=3.0V, IC=5.0A

2.8

V

VBE(ON)

VCE=3.0V, IC=10A

4.5

V

hFE

VCE=3.0V, IC=5.0A

1K

20K

hFE

VCE=3.0V, IC=10A

100

VF

IF=10A

4.0

V

Cob

VCB=10V, IE=0, f=1.0MHz

200

pF

|hhe|

VCE=5.0V, IC=1.0A, f=1.0MHz

20

hhe

VCE=5.0V, IC=1.0A, f=1.0kHz

1K

R2