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1N60PL-T92-R Scheda tecnica(PDF) 2 Page - Unisonic Technologies |
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1N60PL-T92-R Scheda tecnica(HTML) 2 Page - Unisonic Technologies |
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2 / 6 page ![]() 1N60P Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 6 www.unisonic.com.tw QW-R502-634.A ABSOLUTE MAXIMUM RATINGS (TC = 25℃, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 2) IAR 1.2 A Continuous Drain Current ID 1.2 A Pulsed Drain Current (Note 2) IDM 4.8 A Single Pulsed (Note 3) EAS 50 mJ Avalanche Energy Repetitive (Note 2) EAR 4.0 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns Power Dissipation (TA=25℃) PD 1 W Junction Temperature TJ +150 ℃ Operating Temperature TOPR -55 ~ +150 ℃ Storage Temperature TSTG -55 ~ +150 ℃ Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature 3. L = 60mH, IAS = 1A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 4. ISD ≤ 1.2A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 140 ℃ /W |
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