2N80G-TM3-R datasheet(2/6 Pages) UTC

2 / 6 page

2N80

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 6

www.unisonic.com.tw

QW-R502-480.C

ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

800

Gate-Source Voltage

VGSS

±30

Avalanche Current (Note 1)

IAR

2.4

Drain Current

Continuous

2.4

Pulsed (Note 1)

IDM

9.6

Avalanche Energy

Single Pulsed (Note 2)

EAS

180

Repetitive (Note 1)

EAR

8.5

Peak Diode Recovery dv/dt (Note 3)

dv/dt

4.0

V/ns

Power Dissipation

TO-220F

TO-251

TO-252

Junction Temperature

+150

°C

Storage Temperature

TSTG

-55~+150

°C

Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. L = 59mH, IAS = 2.4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 2.4A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C

4. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

TO-220F

θJA

62.5

°C/W

TO-251

TO-252

110

Junction to Case

TO-220F

θJC

5.2

°C/W

TO-251

TO-252

2.85

ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

ID=250µA, VGS=0V

800

Breakdown Voltage Temperature Coefficient △BVDSS/△TJ Reference to 25°C, ID=250µA

0.9

V/°C

Drain-Source Leakage Current

IDSS

VDS=800V, VGS=0V

µA

VDS=640V, TC=125°C

100

Gate- Source Leakage Current

Forward

IGSS

VGS=+30V, VDS=0V

+100 nA

Reverse

VGS=-30V, VDS=0V

-100 nA

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS=VGS, ID=250µA

3.0

5.0

Static Drain-Source On-State Resistance

RDS(ON)

VGS=10V, ID=1.2A

4.8

6.3

Ω

Forward Transconductance (Note 1)

gFS

VDS=50V, ID=1.2A

2.65

DYNAMIC PARAMETERS

Input Capacitance

CISS

VGS=0V, VDS=25V, f=1.0MHz

425

550

Output Capacitance

COSS

Reverse Transfer Capacitance

CRSS

5.5

7.0

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