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IL66 Scheda tecnica(PDF) 1 Page - Siemens Semiconductor Group

Il numero della parte IL66
Spiegazioni elettronici  PHOTODARLINGTON OPTOCOUPLER
PDF  3 Pages
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Produttore elettronici  SIEMENS [Siemens Semiconductor Group]
Homepage  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

IL66 Scheda tecnica(HTML) 1 Page - Siemens Semiconductor Group

  IL66 Datasheet HTML 1Page - Siemens Semiconductor Group IL66 Datasheet HTML 2Page - Siemens Semiconductor Group IL66 Datasheet HTML 3Page - Siemens Semiconductor Group  
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5–1
FEATURES
• Internal RBE for High Stability
• Current Transfer Ratio is Tested
at 2.0 mA and 0.7 mA Input
IL/ILD/ILQ66 Series:
- 1, 100% min. at IF=2 mA, VCE=10 V
- 2, 300% min. at IF=2 mA, VCE=10 V
- 3, 400% min. at IF=0.7 mA, VCE=10 V
- 4, 500% min. at IF=2 mA, VCE=5 V
•
Four Available CTR Categories per Package
Type
•
BVCEO>60 V
• Standard DIP Packages
• Underwriters Lab File #E52744
•
VDE 0884 Available with Option 1
DESCRIPTION
IL66, ILD66, and ILQ66 are optically coupled isola-
tors employing Gallium Arsenide infrared emitters
and silicon photodarlington detectors. Switching
can be accomplished while maintaining a high
degree of isolation between driving and load cir-
cuits, with no crosstalk between channels.
Maximum Ratings
Emitter (Each Channel)
Peak Reverse Voltage........................................ 6 V
Continuous Forward Current......................... 60 mA
Power Dissipation at 25
°C ......................... 100 mW
Derate Linearly from 25
°C ................... 1.33 mW/°C
Detector (Each Channel)
Power Dissipation at 25
°C Ambient........... 150 mW
Derate Linearly from 25
°C ..................... 2.0 mW/°C
Package
Isolation Test Voltage
(t=1 sec.)........................................5300 VACRMS
Total Package Power Dissipation at 25
°C
IL66.......................................................... 250 mW
ILD66 ....................................................... 400 mW
ILQ66 ....................................................... 500 mW
Derate Linearly from 25
°C
IL66...................................................... 3.3 mW/
°C
ILD66 ................................................. 5.33 mW/
°C
ILQ66 ................................................. 6.67 mW/
°C
Creepage.................................................7 min mm
Clearance ................................................7 min mm
Comparative Tracking Index..............................175
Isolation Resistance
VIO=500 V, TA=25°C................................≥10
12
Ω
VIO=500 V, TA=100°C..............................≥10
11
Ω
Storage Temperature ................... –55
°C to +125°C
Operating Temperature................ –55
°C to +100°C
Lead Soldering Time at 260
°C ....................10 sec.
V
DE
Dimensions in inches (mm)
.010 (.25)
.014 (.35)
.110 (2.79)
.150 (3.81)
.130 (3.30)
.150 (3.81)
.020 (.051) min.
.300 (7.62)
Typ.
.031 (0.80)
.035 (0.90)
.039
(1.00)
min.
.018 (0.45)
.022 (0.55)
.335 (8.50)
.343 (8.70)
6
5
4
1
2
3
18
°
Typ.
.300 (7.62)
.347 (8.82)
4
°
typ.
.255 (6.48)
.268 (6.81)
3
4
6
5
.379 (9.63)
.390 (9.91)
.030 (.76)
.045 (1.14)
4
°
Typ.
.100 (2.54) Typ.
.100 (2.54) Typ.
10
°
Typ.
3
°–9°
.305 Typ.
(7.75) Typ.
.018 (.46)
.022 (.56)
.008 (.20)
.012 (.30)
.115 (2.92)
.135 (3.43)
1
2
8
7
.130 (3.30)
.150 (3.81)
.030 (.76 )
.040 (1.02)
1
2
3
6
5
4
Anode
Cathode
NC
Base
Collector
Emitter
Anode
Cathode
Cathode
Anode
Emitter
Collector
Collector
Emitter
1
2
3
4
8
7
6
5
Anode
Cathode
Cathode
Anode
Emitter
Collector
Collector
Emitter
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
Emitter
Collector
Collector
Emitter
Anode
Cathode
Cathode
Anode
.248 (6.30)
.256 (6.50)
.255 (6.48)
.268 (6.81)
.779 (19.77 )
.790 (20.07)
Pin
One
I.D.
.130 (3.30)
.150 (3.81)
.030 (.76 )
.040 (1.02)
.030 (.76)
.045 (1.14)
4
°
Typ.
.100 (2.54) Typ.
.018 (.46)
.022 (.56)
10
°
Typ.
3
°–9°
.305 Typ.
(7.75) Typ.
.008 (.20)
.012 (.30)
.115 (2.92)
.135 (3.43)
Pin One I.D.
Pin One I.D.
SINGLE CHANNEL
IL66 SERIES
DUAL CHANNEL
ILD66 SERIES
QUAD CHANNEL
ILQ 66 SERIES
PHOTODARLINGTON OPTOCOUPLER


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