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2SD1857G-R-T92-B Scheda tecnica(PDF) 2 Page - Unisonic Technologies

Il numero della parte 2SD1857G-R-T92-B
Spiegazioni elettronici  POWER TRANSISTOR
PDF  3 Pages
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Produttore elettronici  UTC [Unisonic Technologies]
Homepage  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

2SD1857G-R-T92-B Scheda tecnica(HTML) 2 Page - Unisonic Technologies

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2SD1857
NPN EPITAXIAL SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R201-057,F
ABSOLUTE MAXIMUM RATING (T
A=25℃, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
120
V
Collector-Emitter Voltage
VCEO
120
V
Emitter-Base Voltage
VEBO
5
V
Collector Power Dissipation
TO-92NL
PC
0.5
W
TO-92
1
TO-251
2
Collector Current
IC
2
A
Collector Current
ICP
3
A
Junction Temperature
TJ
+150
℃
Storage Temperature
TSTG
-40 ~ +150
℃
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (T
A=25℃)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector-Base Breakdown Voltage
BVCBO
IC=50µA
120
V
Collector-Emitter Breakdown Voltage
BVCEO
IC=1mA
120
V
Emitter-Base Breakdown Voltage
BVEBO
IE=50µA
5
V
Collector Cut-Off Current
ICBO
VCB=100V
1
µA
Emitter Cut-Off Current
IEBO
VEB=4V
1
µA
DC Current Transfer Ratio
hFE
VCE=5V, IC=0.1A
82
390
Collector-Emitter Saturation Voltage
VCE(SAT)
IC=/IB=1A/0.1A (Note)
0.4
V
Transition Frequency
fT
VCE=5V, IE= -0.1A, f=30MHz.
80
MHz
Output Capacitance
COB
VCB=10V, IE=0A, f=1MHz (Note)
20
pF
Note: Measured using pulse current.
CLASSIFICATION OF hFE
RANK
P
Q
R
RANGE
82-180
120-270
180-390



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