MJE13003

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 8

www.unisonic.com.tw

QW-R204-004,N

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Emitter Voltage

400

V

Collector-Base Voltage

700

V

Emitter Base Voltage

9

V

Collector Current

Continuous

1.5

A

Peak (1)

3

Base Current

Continuous

0.75

A

Peak (1)

1.5

Emitter Current

Continuous

2.25

A

Peak (1)

4.5

Power Dissipation

TO-126 / TO-126C

1.4

W

TO-92 / TO-92L

1.1

TO-220

35

TO-251/ TO-252

25

Junction Temperature

+150

°C

Storage Temperature

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

(Note)

Collector-Emitter Sustaining Voltage

400

V

Collector Cutoff Current

1

mA

5

Emitter Cutoff Current

1

mA

SECOND BREAKDOWN

Second Breakdown Collector Current with bass

forward biased

Is/b

See Fig.5

Clamped Inductive SOA with base reverse biased

See Fig.6

ON CHARACTERISTICS

(Note)

DC Current Gain

14

57

5

30

Collector-Emitter Saturation Voltage

0.5

V

1

3

1

Base-Emitter Saturation Voltage

1

V

1.2

1.1

DYNAMIC CHARACTERISTICS

Current-Gain-Bandwidth Product

4

10

MHz

Output Capacitance

21

pF