| Motore di ricerca datesheet componenti elettronici |
|
12N06L-TN3-R Scheda tecnica(PDF) 2 Page - Unisonic Technologies |
|
|
|||||||||||||||||||||||||||||
12N06L-TN3-R Scheda tecnica(HTML) 2 Page - Unisonic Technologies |
|
2 / 5 page ![]() 12N06 Preliminary Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 5 www.unisonic.com.tw QW-R502-561.a ABSOLUTE MAXIMUM RATINGS(TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage (VGS=0) VDSS 60 V Drain-Gate Voltage (RGS=20KΩ)) VDGR 60 V Gate-Source Voltage VGSS ±20 V TC = 25°C 12 A Continuous TC = 100°C ID 8.5 A Drain Current Pulsed (Note 2) IDM 48 A Power Dissipation PD 30 W Derating Factor 0.2 W/°C Peak Diode Recovery dv/dt (Note 3) dv/dt 15 V/ns Avalanche Energy (Note 4) EAS 100 mJ Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Note: 1 Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by safe operating area 3. ISD ≤ 12A, di/dt ≤ 200A/µs, VDS ≤ 40V, TJ ≤ TJMAX 4. Starting TJ = 25°C, ID = 6A, VDD = 30V THERMAL CHARACTERISTICS PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 100 °C/W Junction to Case θJC 5 °C/W |
|
|
Link URL |
| Lei ha avuto il aiuto da alldatasheet? [ DONATE ] |
Di alldatasheet | Richest di pubblicita | contatti | Privacy Policy | Collegamento alla scheda tecnica | scambio Link | Ricerca produttore All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |