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12P10G-TQ2-R Scheda tecnica(PDF) 2 Page - Unisonic Technologies |
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12P10G-TQ2-R Scheda tecnica(HTML) 2 Page - Unisonic Technologies |
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2 / 6 page ![]() 12P10 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 6 www.unisonic.com.tw QW-R502-262.B ABSOLUTE MAXIMUM RATINGS (Tc=25℃, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS -100 V Gate-Source Voltage VGSS ±30 V Continuous Drain Current ID -9.4 A Pulsed Drain Current (Note 2) IDM -37.6 A Avalanche Current (Note 2) IAR -9.4 A Single Pulsed Avalanche Energy (Note 3) EAS 370 mJ Repetitive Avalanche Energy (Note 2) EAR 5.0 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt -6.0 V/ns Power Dissipation TO-251/ TO-252 PD 50 W TO-263 65 Junction Temperature TJ +150 ℃ Storage Temperature TSTG -55 ~ +150 ℃ Note:1. 2. 3. 4. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. Pulse width limited by TJ(MAX) L=6.3mH, IAS=-9.4A, VDD=-25V, RG=25Ω, Starting TJ=25°C ISD≤-11.5A, di/dt≤300μA/ s, VDD≤BVDSS, Starting TJ=25°C THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient TO-251/ TO-252 θJA 110 ℃ /W TO-263 62.5 Junction to Case TO-251/ TO-252 θJC 2.5 ℃ /W TO-263 2.31 |
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