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SSM3K333RL-AE3-R Scheda tecnica(PDF) 2 Page - Unisonic Technologies

Il numero della parte SSM3K333RL-AE3-R
Spiegazioni elettronici  6A, 30V N-CHANNEL POWER MOSFET
PDF  3 Pages
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Produttore elettronici  UTC [Unisonic Technologies]
Homepage  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

SSM3K333RL-AE3-R Scheda tecnica(HTML) 2 Page - Unisonic Technologies

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SSM3K333R
Preliminary
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
VER.a
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±20
V
Drain Current
Continuous
ID (Note 2)
6
A
Pulsed
IDM (Note 2)
12
A
Power Dissipation
PD (Note 3)
1
W
t=10s
2
W
Channel Temperature
TCH
150
°C
Storage Temperature
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. The channel temperature should not exceed 150°C during use.
3. Mounted on a FR4 board.(25.4mm×25.4mm×1.6mm, Cu Pad: 645mm
2)
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=10mA, VGS=0V
30
V
Drain-Source Leakage Current
IDSS
VDS=30V, VGS=0V
1
µA
Gate-Source Leakage Current
Forward
IGSS
VGS=+20V, VDS=0V
+100 nA
Reverse
VGS=-20V, VDS=0V
-100 nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS= VGS, ID=0.1mA
1.3
2.5
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS=4.5V, ID=3A (Note 2)
25.7
42
mΩ
VGS=10V, ID=5A (Note 2)
18.7
28
mΩ
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=15V, f=1.0MHz
436
pF
Output Capacitance
COSS
77
pF
Reverse Transfer Capacitance
CRSS
28
pF
SWITCHING PARAMETERS
Total Gate Charge
QG
VGS=4.5V, VDD=15V, ID=6A
3.4
nC
Gate to Source Charge
QGS
1.8
nC
Gate to Drain Charge
QGD
1.0
nC
Turn-ON Delay Time
tD(ON)
VDD=15V, ID=3A, VGS=0~4.5V,
RG=10Ω
12
ns
Turn-OFF Delay Time
tD(OFF)
9
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
ISD=6A, VGS=0V
0.85 1.2
V
Notes: 1. The channel temperature should not exceed 150°C during use.
2. Pulse test



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