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UF630L-TN3-R Scheda tecnica(PDF) 2 Page - Unisonic Technologies |
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UF630L-TN3-R Scheda tecnica(HTML) 2 Page - Unisonic Technologies |
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2 / 7 page ![]() UF630 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 7 www.unisonic.com.tw QW-R502-049,F ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 200 V Drain-Gate Voltage (RGS = 20kΩ, TJ =25°C ~125°C) VDGR 200 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current ID 9 A Pulsed Drain Current (Note 2) IDM 36 A Single Pulse Avalanche Energy (Note 3) EAS 150 mJ TO-220 75 TO-220F1/ TO-220F 51 Power Dissipation TO-251/ TO-252 PD 54 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by TJ 3. L = 4mH, IAS = 8.3A, VDD = 20V, RG = 25 Ω, Starting TJ = 25°C THERMAL DATA PARAMETER SYMBOL RATING UNIT TO-220/ TO-220F1/ TO-220F 80 Junction to Ambient TO-251/ TO-252 θJA 110 °C/W TO-220 1.67 TO-220F1/ TO-220F 2.45 Junction to Case TO-251/ TO-252 θJC 2.3 °C/W |
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