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UMBF170G-AE2-R Scheda tecnica(PDF) 1 Page - Unisonic Technologies |
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UMBF170G-AE2-R Scheda tecnica(HTML) 1 Page - Unisonic Technologies |
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1 / 2 page ![]() UNISONIC TECHNOLOGIES CO., LTD UMBF170 Preliminary Power MOSFET www.unisonic.com.tw 1 of 4 Copyright © 2010 Unisonic Technologies Co., Ltd QW-R502-291.b N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UMBF170 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)<5Ω@VGS=10V * RDS(ON)<5.3Ω@VGS=4.5V * Low Reverse Transfer Capacitance ( CRSS = typical 7.5 pF ) * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness SYMBOL 2.Gate 1.Source 3.Drain SOT-23-3 1 2 3 (JEDEC TO-236) ORDERING INFORMATION Pin Assignment Ordering Number Package 1 2 3 Packing UMBF170G-AE2-R SOT-23-3 S G D Tape Reel MARKING |
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