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Motore di ricerca datesheet componenti elettronici |
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Motore di ricerca datesheet componenti elettronici |
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UP9T15GL-TN3-R Scheda tecnica(PDF) 1 Page - Unisonic Technologies |
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UP9T15GL-TN3-R Scheda tecnica(HTML) 1 Page - Unisonic Technologies |
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1 / 5 page  UNISONIC TECHNOLOGIES CO., LTD UP9T15G Power MOSFET www.unisonic.com.tw 1 of 5 Copyright © 2008 Unisonic Technologies Co., Ltd QW-R502-208.A N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UP9T15GL uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * VDS(V)=20V * ID=12 .5A (VGS=4.5V) * RDS(ON)<50mΩ@ VGS =4.5 V, ID =6 A * RDS(ON)<80mΩ@ VGS =2.5 V, ID =5.2 A SYMBOL 1.Gate 3.Source 2.Drain *Pb-free plating product number: UP9T15GL ORDERING INFORMATION Ordering Number Pin Assignment Normal Lead Free Plating Package 1 2 3 Packing UP9T15G-TN3-R UP9T15GL-TN3-R TO-252 G D S Tape Reel UP9T15G-TN3-T UP9T15GL-TN3-T TO-252 G D S Tube |
Codice articolo simile - UP9T15GL-TN3-R |
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Descrizione simile - UP9T15GL-TN3-R |
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