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UT60T03-TF3-R Scheda tecnica(PDF) 2 Page - Unisonic Technologies

Il numero della parte UT60T03-TF3-R
Spiegazioni elettronici  N-CHANNEL ENHANCEMENT MODE
PDF  5 Pages
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Produttore elettronici  UTC [Unisonic Technologies]
Homepage  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UT60T03-TF3-R Scheda tecnica(HTML) 2 Page - Unisonic Technologies

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UT60T03
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 5
www.unisonic.com.tw
QW-R502-183.B
ABSOLUTE MAXIMUM RATINGS(TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current
ID
45
A
Pulsed Drain Current (Note 2)
IDM
120
A
TO-220F
56
Power Dissipation (TC=25°C)
TO-252
PD
44
W
Junction Temperature
TJ
+150
℃
Strong Temperature
TSTG
-55 ~ +175
℃
Note:1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2 .Pulse width limited by safe operating area.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
TO-220F
62.5
Junction to Ambient
TO-252
θJA
110
℃
/W
TO-220F
2.66
Junction to Case
TO-252
θJC
3.4
℃
/W
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS =0 V, ID =250µA
30
V
Drain-Source Leakage Current
IDSS
VDS =30V, VGS =0V
1
µA
Gate-Body Leakage Current
IGSS
VGS = ±20 V
±100
nA
Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ Reference to 25℃, ID=1mA
0.026
V/℃
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS =VGS, ID =250 µA
1
3
V
VGS =10 V, ID =20 A
12
Static Drain-Source On-Resistance(Note 1)
RDS(ON)
VGS =4.5 V, ID =15 A
25
mΩ
DYNAMIC PARAMETERS
Input Capacitance
CISS
1135
Output Capacitance
COSS
200
Reverse Transfer Capacitance
CRSS
VDS = 25V, VGS = 0V,
f = 1.0MHz
135
pF
SWITCHING PARAMETERS
Total Gate Charge
QG
11.6
Gate Source Charge
QGS
3.9
Gate Drain Charge
QGD
VDS = 20V, VGS = 4.5V,
ID =20 A (Note 1)
7
nC
Turn-ON Delay Time
tD(ON)
8.8
Turn-ON Rise Time
tR
57.5
Turn-OFF Delay Time
tD(OFF)
18.5
Turn-OFF Fall-Time
tF
VGS=10V, VDS=15V,
RD=0.75Ω, ID =20 A,
RG =3.3 Ω (Note 1)
6.4
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Forward On Voltage (Note 1)
VSD
IS=45 A,VGS=0V
1.3
V
Reverse Recovery Time
tRR
23.3
ns
Reverse Recovery Charge
QRR
IS=20 A, VGS=0 V,dI/dt=100
A/μs
16
nC
Note: 1.Pulse width ≤ 300us , duty cycle ≤ 2%.
2. Essentially independent of operating temperature



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