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UT3416L-AE3-R Scheda tecnica(PDF) 1 Page - Unisonic Technologies |
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UT3416L-AE3-R Scheda tecnica(HTML) 1 Page - Unisonic Technologies |
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1 / 3 page ![]() UNISONIC TECHNOLOGIES CO., LTD UT3416 Preliminary Power MOSFET www.unisonic.com.tw 1 of 3 Copyright © 2009 Unisonic Technologies Co., Ltd QW-R502-325.c N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC UT3416 is advanced n-channel enhancement MOSFET which can provide the designer with the best combination of excellent RDS (ON), low gate charge and low gate voltages as low as 1.8V.When it is used as a load switch or in PWM application, the UTC UT3416 can be considered as an ideal. FEATURES * VDS =20 V * ID =6.5 A * RDS(ON)<22 mΩ @VGS = 4.5 V * RDS(ON) <26 mΩ @VGS = 2.5 V * RDS(ON) <34 mΩ @VGS = 1.8 V SYMBOL 2.Gate 1.Source 3.Drain ORDERING INFORMATION Ordering Number Pin Assignment Lead Free Halogen Free Package 1 2 3 Packing UT3416L-AE3-R UT3416G-AE3-R SOT-23 S G D Tape Reel MARKING 34S L: Lead Free G: Halogen Free |
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