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UTD413L-TN3-R Scheda tecnica(PDF) 1 Page - Unisonic Technologies |
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UTD413L-TN3-R Scheda tecnica(HTML) 1 Page - Unisonic Technologies |
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1 / 4 page  UNISONIC TECHNOLOGIES CO., LTD UTD413 Power MOSFET www.unisonic.com.tw 1 of 4 Copyright © 2012 Unisonic Technologies Co., Ltd QW-R502-246.C P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTD413 can provide excellent RDS(ON) and low gate charge by using UTC’s advanced trench technology. The UTD413 is well suited for high current load applications with the excellent thermal resistance of the TO-252 package. Standard Product UTD413 is Pb-free. FEATURES * RDS(ON) < 45mΩ @VGS = -10V * RDS(ON) < 69mΩ @VGS = -4.5V * Low capacitance * Low gate charge * Fast switching capability * Avalanche energy specified SYMBOL 1.Gate 3.Source 2.Drain ORDERING INFORMATION Ordering Number Package Pin Assignment Packing Lead Free Halogen Free 1 2 3 UTD413L-TN3-R UTD413G-TN3-R TO-252 G D S Tape Reel UTD413L-TN3-T UTD413G-TN3-T TO-252 G D S Tube |
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