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UTD3055G-TN3-R Scheda tecnica(PDF) 3 Page - Unisonic Technologies

Il numero della parte UTD3055G-TN3-R
Spiegazioni elettronici  POWER MOSFET 12 AMPS, 60 VOLTS N?밅HANNEL DPAK
PDF  4 Pages
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Produttore elettronici  UTC [Unisonic Technologies]
Homepage  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UTD3055G-TN3-R Scheda tecnica(HTML) 3 Page - Unisonic Technologies

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UTD3055
Preliminary
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
3 of 4
www.unisonic.com.tw
QW-R502-460.a
ELECTRICAL CHARACTERISTICS (Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
SWITCHING PARAMETERS
(Note 2)
QT
12.2
17
nC
Q1
3.2
nC
Q2
5.2
nC
Gate Charge
Q3
VGS=10V, VDS=48V, ID=12A
5.5
nC
Turn-ON Delay Time
tD(ON)
7.0
10
ns
Rise Time
tR
34
60
ns
Turn-OFF Delay Time
tD(OFF)
17
30
ns
Fall-Time
tF
VDD=30V, VGS=10V, ID=12A,
RG=9.1Ω
18
50
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
IS=12A, VGS=0V
1.0
1.6
Drain-Source Diode Forward Voltage
(Note 1)
VSD
IS=12A, VGS=0V, TJ=150°C
0.91
V
tRR
56
ns
tA
40
ns
Reverse Recovery Time
tB
16
ns
Reverse Recovery Charge
QRR
IS=12A, VGS=0V, dIs/dt=100A/µs
0.128
µC
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25’’
from package to center of die)
LD
4.5
nH
Internal Source Inductance
(Measured from the source lead 0.25,
from package to source bond pad)
LS
7.5
nH
Note: 1. Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%.
2. Switching characteristics are independent of operating junction temperature.



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