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UTM3023-TN3-R Scheda tecnica(PDF) 2 Page - Unisonic Technologies |
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UTM3023-TN3-R Scheda tecnica(HTML) 2 Page - Unisonic Technologies |
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2 / 5 page ![]() UTM3023 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 5 www.unisonic.com.tw QW-R502-178.A ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 30 Gate-Source Voltage VGSS ±20 V Maximum Continuous Drain Current ID 30 Maximum Pulsed Drain Current IDM 70 A Maximum Power Dissipation PD 62.5 W Maximum Junction Temperature TJ 150 Storage Temperature Range TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS =0 V, IDS =250µA 30 V Drain-Source Leakage Current IDSS VDS =24 V, VGS =0 V 1 µA Gate-Source Leakage Current IGSS VDS =0 V, VGS = ±20V ±100 nA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS =VGS, IDS =250 µA 1 1.5 2 V VGS =10 V, IDS =20 A 15 20 Drain-Source On-State Resistance(Note 2) RDS(ON) VGS =5 V, IDS =10 A 22 28 mΩ DYNAMIC CHARACTERISTICS Input Capacitance CISS 1200 Output Capacitance COSS 220 Reverse Transfer Capacitance CRSS VDS =15 V, VGS =0V, f=1.0MHz 100 pF SWITCHING CHARACTERISTICS Turn-ON Delay Time (Note 2) tD(ON) 11 18 Turn-ON Rise Time tR 17 26 Turn-OFF Delay Time tD(OFF) 37 54 Turn-OFF Fall Time tF IDS=2 A,VDD=15 V,RG=6 Ω, VGEN =10V 20 30 ns Total Gate Charge (Note 2) QG 15 20 Gate-Source Charge QGS 5.8 Gate-Drain Charge QGD VDS =15V, VGS =5V, IDS =10A 3.8 nC SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage(Note2) VSD ISD=15A,VGS=0V 0.7 1.3 V Note: 1. Pulse width limited by TJ(MAX) 2. Pulse width ≤300us, duty cycle ≤2% 3. Surface Mounted on FR4 Board, t ≤ 10 sec. |
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