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UTT15P06G-TN3-R Scheda tecnica(PDF) 2 Page - Unisonic Technologies

Il numero della parte UTT15P06G-TN3-R
Spiegazioni elettronici  15A, 60V P-CHANNEL POWER MOSFET
PDF  3 Pages
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Produttore elettronici  UTC [Unisonic Technologies]
Homepage  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UTT15P06G-TN3-R Scheda tecnica(HTML) 2 Page - Unisonic Technologies

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UTT15P06
Preliminary
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R502-733.a
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
-60
V
Gate-Source Voltage
VGSS
±25
V
Drain Current
Continuous
TC=25°C
ID
-15
A
Pulsed
IDM
-45
A
Power Dissipation (Note 2)
PD
31.3
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
Steady state
θJA
62.5
°C/W
Junction to Case
θJC
4
°C/W
Notes: 1. Duty cycle≤1 %.
2. See SOA curve for voltage derating.
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=-250µA, VGS=0V
-60
V
Drain-Source Leakage Current
IDSS
VDS=-60V, VGS=0V
-1
µA
Gate-Source Leakage Current
Forward
IGSS
VGS=+25V, VDS=0V
+100
nA
Reverse
VGS=-25V, VDS=0V
-100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=-250µA
-1
-3
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS=-10V, ID=-15A (Note 1)
90
mΩ
DYNAMIC PARAMETERS
(Note 2)
Input Capacitance
CISS
VGS=0V, VDS=-25V, f=1.0MHz
(Note 2)
1100 2660
pF
Output Capacitance
COSS
115
pF
Reverse Transfer Capacitance
CRSS
90
pF
SWITCHING PARAMETERS
Total Gate Charge
QG
VGS=-10V, VDS=-30V,
ID=-15A (Note 3)
14
27
nC
Gate to Source Charge
QGS
3
nC
Gate to Drain Charge
QGD
8
nC
Turn-ON Delay Time
tD(ON)
VDD=-30V, ID=-1A, RG=12.5Ω
(Note 3)
16
ns
Rise Time
tR
30
ns
Turn-OFF Delay Time
tD(OFF)
50
ns
Fall-Time
tF
20
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
(TC=25°C) (Note 2)
Maximum Body-Diode Continuous Current
IS
-15
A
Maximum Body-Diode Pulsed Current
ISM
-45
A
Drain-Source Diode Forward Voltage
VSD
IF=-15A, VGS=0V (Note 1)
-1.0
-1.5
V
Notes: 1. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
2. Guaranteed by design, not subject to production testing.
3. Independent of operating temperature.



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