UTT18P10G-TN3-R datasheet(2/6 Pages) UTC

2 / 6 page

UTT18P10

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 6

www.unisonic.com.tw

QW-R502-619.a

ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

-100

Gate-Source Voltage

VGSS

±20

TC=25°C

-19

Continuous,

VGSS@-10V

TC=100°C

-13

Drain Current

Pulsed (Note 2)

IDM

-72

Avalanche Current (Note 2)

IAR

-19

Repetitive (Note 3)

EAS

640

Avalanche Energy

Single Pulsed (Note 2)

EAR

Peak Diode Recovery dv/dt (Note 4)

dv/dt

-5.5

V/ns

Power Dissipation (TC=25°C)

150

Junction Temperature

-55~+175

°C

Storage Temperature

TSTG

-55~+175

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive rating; pulse width limited by max. junction temperature.

3. VDD=-25V, starting TJ=25°C, L=2.7mH, RG=25Ω, IAS=-19A. (See Figure 2)

4. ISD≤-19A, di/dt≤200A/µs, VDD≤BVDSS, TJ≤175°C

THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Case

θJC

1.0

°C/W

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