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UTT30N05L-TN3-R Scheda tecnica(PDF) 2 Page - Unisonic Technologies

Il numero della parte UTT30N05L-TN3-R
Spiegazioni elettronici  30A, 50V N-CHANNEL ENHANCEMENT MODE POWER MOSFET TRANSISTOR
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Produttore elettronici  UTC [Unisonic Technologies]
Homepage  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UTT30N05L-TN3-R Scheda tecnica(HTML) 2 Page - Unisonic Technologies

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UTT30N05
Preliminary
Power MOSFE
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R502-660.a
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
50
V
Gate-Source Voltage
VGSS
±20
V
Continuous
ID
30
A
Drain Current
Pulsed
IDM
120
A
Single Pulsed
EAS
300
mJ
Avalanche Energy
Repetitive
EAR
8
mJ
Power Dissipation
PD
44
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
50
°C/W
Junction to Case
θJC
2.85
°C/W
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
50
V
Drain-Source Leakage Current
IDSS
VDS=50V, VGS=0V
1
µA
Forward
VGS=+20V, VDS=0V
+100
nA
Gate- Source Leakage Current
Reverse
IGSS
VGS=-20V, VDS=0V
-100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
2
4
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=15A
32
40
mΩ
DYNAMIC PARAMETERS
Input Capacitance
CISS
800
pF
Output Capacitance
COSS
300
pF
Reverse Transfer Capacitance
CRSS
VGS=0V, VDS=25V,
f=1.0MHz
80
pF
SWITCHING PARAMETERS
Total Gate Charge
QG
20
30
nC
Gate to Source Charge
QGS
6
nC
Gate to Drain Charge
QGD
VGS=10V, VDS=30V,
ID=30A, IG=3.33mA
9
nC
Turn-ON Delay Time
tD(ON)
12
ns
Rise Time
tR
79
ns
Turn-OFF Delay Time
tD(OFF)
50
ns
Fall-Time
tF
VDD=30V, ID=15A,
RG=4.7Ω, VGS=10V
52
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
30
A
Maximum Body-Diode Pulsed Current
ISM
120
A
Drain-Source Diode Forward Voltage
VSD
IS=30A, VGS=0V
1.4
V



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