UTT30N08G-TN3-R datasheet(2/6 Pages) UTC

2 / 6 page

UTT30N08

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 6

www.unisonic.com.tw

QW-R502-732.a

ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) (Note 4)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain to Source Voltage

VDSS

Gate-Source Voltage

VGSS

±20

Drain Current (Note 5)

Continuous

TC=25°C

TC=100°C

21.3

Pulsed (Note 2)

IDM

120

Avalanche Energy

Single Pulsed (Note 3)

EAS

300

Repetitive (Note 2)

EAR

Power Dissipation (TC=25°C)

Junction Temperature

+150

°C

Storage Temperature

TSTG

-55~+150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating; Pulse width limited by maximum junction temperature.

3. L=4mH, IAS=30A. VDD=50V, RG=25Ω, Starting TJ=25°C

4. Drain current limited by maximum junction temperature

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

θJA

110

°C/W

Junction to Case

θJC

4.53

°C/W

ELECTRICAL CHARACTERISTICS

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

ID=250µA, VGS=0V, TJ=150°C

Drain-Source Leakage Current

IDSS

VDS=80V, VGS=0V,

µA

Gate- Source Leakage Current

Forward

IGSS

VGS=+20V, VDS=0V

+100 nA

Reverse

VGS=-20V , VDS=0V

-100

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VGS=VDS, ID=250µA

2.0

4.0

Static Drain-Source On-State Resistance

RDS(ON)

VGS=10V, ID=30A

mΩ

DYNAMIC PARAMETERS

Input Capacitance

CISS

VDS=25, VGS=0V, f=1.0MHz

2400

Output Capacitance

COSS

390

Reverse Transfer Capacitance

CRSS

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