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UTT30P04G-TN3-R Scheda tecnica(PDF) 2 Page - Unisonic Technologies |
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UTT30P04G-TN3-R Scheda tecnica(HTML) 2 Page - Unisonic Technologies |
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2 / 3 page ![]() UTT30P04 Preliminary Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 3 www.unisonic.com.tw QW-R502-613.a ABSOLUTE MAXIMUM RATINGS (TA=25°C Unless Otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDS -40 V Gate-Source Voltage VGS ±20 V TC=25°C -21 Continuous Drain Current TC=70°C ID -17 Pulsed Drain Current (Note 2) IDM -70 Avalanche Current IAS -27 A Avalanche Energy (Note 3) L=0.1mH EAS 36 mJ TC=25°C 30 Power Dissipation TC=70°C PD 20 W Junction Temperature TJ -55~150 °C Storage Temperature TSTG -55~150 °C Note:1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by maximum junction temperature. 3. VDD=-20V. Starting TJ=25°C. THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 40 °C/W Junction to Case θJC 4.1 °C/W |
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