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UTT60N06L-TN3-R Scheda tecnica(PDF) 2 Page - Unisonic Technologies |
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UTT60N06L-TN3-R Scheda tecnica(HTML) 2 Page - Unisonic Technologies |
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2 / 8 page ![]() UTT60N06 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 8 www.unisonic.com.tw QW-R502-575.A ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain to Source Voltage VDSS 60 V Gate to Source Voltage VGS ±20 V TC = 25°C 60 A Continuous Drain Current TC = 100°C ID 39 A Drain Current Pulsed (Note 2) IDM 120 A Avalanche Energy Single Pulsed EAS 100 mJ Power Dissipation (TC=25°C) PD 83 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note:1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repeativity rating: pulse width limited by junction temperature THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 110 °C/W Junction to Case θJC 1.8 °C/W |
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