HS7541A

12-Bit CMOS Multiplying DAC

© Copyright 2000 Sipex Corporation

2

SPECIFICATIONS

(T

PARAMETER

MIN.

TYP.

MAX.

UNIT

CONDITIONS

STATIC PERFORMANCE

Resolution

12

Bits

Integral Non-Linearity

Note 6

-AJ, -AA

±1.0

LSB

Note 5; 11-bit relative accuracy

-AK, -AB

±0.5

LSB

Note 5; 12-bit relative accuracy

Differential Non-Linearity

Note 7

-AJ, -AA

±1.0

LSB

Note 5; Monotonic to 12-bits

-AK, -AB

±0.5

LSB

Note 5; Monotonic to 12-bits

Gain Error

Note 17

-AJ, -AA

±6

LSB

±8

LSB

Note 5

-AK, -AB

±3

LSB

±5

LSB

Note 5

Output Leakage Current

±5

nA

At I

±10

nA

Note 5

AC PERFORMANCE CHARACTERISTICS

Output Amplifier HOS-050;

Note 8

Propagation Delay

100

ns

Note 9

Current Settling Time

0.6

µs

Full scale transition; Note 10

Output Capacitance

CI

200

pF

Note 5; data inputs V

IH

CI

70

pF

Note 5; data inputs V

IH

CI

70

pF

Note 5; data inputs V

IL

CI

200

pF

Note 5; data inputs V

IL

Glitch Energy

1,000

nVs

Note 11

Multiplying Feedthrough Error

1.0

mV

P-P

Measured at output I

Note 12

0.1

mV

P-P

Measured at output I

Note 13

STABILITY

Gain Error TC

±1.0

ppm/

°C

INL TC

±0.1

ppm/

°C

DNL TC

±0.1

ppm/

°C

Power Supply Rejection Ratio

±0.02

%/%

V

REFERENCE INPUT

Input Resistance

7

10

15

K

Ω

Pin 19 to GND

Input Resistance TC

±150

ppm/

°C

Voltage Range

±25

Volts

Note 5 and 14

CAUTION:

ESD (ElectroStatic Discharge) sensitive

device. Permanent damage may occur on

unconnected devices subject to high energy

electrostatic fields. Unused devices must be

stored in conductive foam or shunts.

Personnel should be properly grounded prior

to handling this device. The protective foam

should be discharged to the destination

socket before devices are removed.

ABSOLUTE MAXIMUM RATINGS

(T

These are stress ratings only and functional operation of the device

at these or any other above those indicated in the operation

sections of the specifications below is not implied. Exposure to

absolute maximum rating conditions for extended periods of time

may affect reliability.

V

Digital Input Voltage to GND ................................. –0.3V, V

V

Output Voltage (Pin 1, Pin 2) ................................ –0.3V, V

Power Dissipation (Any Package to +75

°C) ........................ 450mW

Derates above 75

°C by ...................................................... 6mW/°C

Dice Junction Temperature ................................................. +150

°C

Storage Temperature ............................................ –65

°C to +150°C

Lead Temperature (Soldering, 60 seconds) ........................ +300

°C