2

Rev. 10-17-00

SP706 +3.0/ +3.3 Low Power Microprocessor Circuits

© Copyright 2000 Sipex Corporation

SPECIFICATIONS

V

typical at 25

°C.

ABSOLUTE MAXIMUM RATINGS

These are stress ratings only and functional operation

of the device at these ratings or any other above those

indicated in the operation sections of the specifications

below is not implied. Exposure to absolute maximum

rating conditions for extended periods of time may

affect reliability.

Terminal Voltage (with respect to GND):

V

All Other Inputs (Note 1)..............-0.3V to (V

Input Current:

V

GND...................................................................20mA

Output Current (all outputs)...............................20mA

ESD Rating...........................................................2kV

R

E

T

E

M

A

R

A

P.

N

I

M.

P

Y

T.

X

A

MS

T

I

N

US

N

O

I

T

I

D

N

O

C

V

,

e

g

n

a

R

e

g

a

t

l

o

V

g

n

i

t

a

r

e

p

O

C

C

0

.

15

.

5V

I

,

t

n

e

r

r

u

C

y

l

p

p

u

S

Y

L

P

P

U

S

5

20

4

µA

V

=

R

M

C

C

g

n

i

t

a

o

l

F

I

D

W

,

g

n

i

t

a

o

l

F

r

o

d

l

o

h

s

e

r

h

T

t

e

s

e

R5

5

.

2

5

8

.

2

0

0

.

3

3

6

.

2

3

9

.

2

8

0

.

3

0

7

.

2

0

0

.

3

5

1

.

3

V

R

/

P

_

0

7

P

S

S

_

0

7

P

S

T

_

0

7

P

S

s

i

s

e

r

e

t

s

y

H

d

l

o

h

s

e

r

h

T

t

e

s

e

R0

2V

m2

e

t

o

N

t

,

h

t

d

i

W

e

s

l

u

P

t

e

s

e

R

S

R

0

4

10

0

20

8

2s

m2

e

t

o

N

T

E

S

E

Re

g

a

t

l

o

V

t

u

p

t

u

O

V

H

O

V

L

O

V

H

O

V

L

O

V

x

8

.

0

C

C

V

C

C

5

.

1

-

3

.

0

4

.

0

V

V

)

X

A

M

(

T

S

R

V

<

C

C

I

,

V

6

.

3

<

E

C

R

U

O

S

0

0

5

=

µA

V

)

X

A

M

(

T

S

R

V

<

C

C

I

,

V

6

.

3

<

K

N

I

S

2

.

1

=mA

V

<

V

5

.

4

C

C

I

,

V

5

.

5

<

E

C

R

U

O

S

0

0

8

=

µA

V

<

V

5

.

4

C

C

I

,

V

5

.

5

<

K

N

I

S

A

m

2

.

3

=

e

g

a

t

l

o

V

t

u

p

t

u

O

T

E

S

E

R

V

H

O

V

L

O

V

H

O

V

L

O

V

C

C

6

.

0

-

V

C

C

5

.

1

-

3

.

0

4

.

0

V

V

)

X

A

M

(

T

S

R

V

<

C

C

I

,

V

6

.

3

<

E

C

R

U

O

S

5

1

2

=

µA

V

)

X

A

M

(

T

S

R

V

<

C

C

I

,

V

6

.

3

<

E

C

R

U

O

S

A

m

2

.

1

=

V

<

V

5

.

4

C

C

I

,

V

5

.

5

<

E

C

R

U

O

S

0

0

8

=

µA

V

<

V

5

.

4

C

C

I

,

V

5

.

5

<

E

C

R

U

O

S

A

m

2

.

3

=

t

,

d

o

i

r

e

P

t

u

o

e

m

i

T

g

o

d

h

c

t

a

W

D

W

0

0

.

10

6

.

15

2

.

2s

V

C

C

V

6

.

3

<

t

,

h

t

d

i

W

e

s

l

u

P

I

D

W

P

W

0

5s

nV

L

I

V

,

V

4

.

0

=

H

I

V

x

8

.

0

=

C

C

,

d

l

o

h

s

e

r

h

T

t

u

p

n

I

I

D

W

V

L

I

V

H

I

V

L

I

V

H

I

V

x

7

.

0

C

C

5

.

3

6

.

0

8

.

0

V

V

)

X

A

M

(

T

S

R

V

<

C

C

V

6

.

3

<

V

T

S

R)

X

A

M

(

V

<

C

C

V

6

.

3

<

V

C

C

V

0

.

5

=

V

C

C

V

0

.

5

=

t

n

e

r

r

u

C

t

u

p

n

I

I

D

W1

-2

0

.

01

µA

V

r

o

0

=

I

D

W

C

C

Continuous Power Dissipation

Plastic DIP

SO

Mini SO

Storage Temperature Range.............-65˚C to +160˚C

Lead Temperature (solding 10 sec)................+300˚C