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STN4438 Scheda tecnica(PDF) 3 Page - Stanson Technology

Il numero della parte STN4438
Spiegazioni elettronici  STN4438 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
PDF  6 Pages
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Produttore elettronici  STANSON [Stanson Technology]
Homepage  http://www.stansontech.com
Logo STANSON - Stanson Technology

STN4438 Scheda tecnica(HTML) 3 Page - Stanson Technology

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STN4438
N Channel Enhancement Mode MOSFET
8.2A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright
© 2008, Stanson Corp.
STN4438 2009. V1
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Static
Drain-Source
Breakdown Voltage
V(BR)DSS
VGS=0V,ID=250uA
60
V
Gate Threshold
Voltage
VGS(th)
VDS=VGS,ID=250uA
1.0
3.0
V
Gate Leakage Current
IGSS
VDS=0V,VGS=±20V
±100
nA
VDS=48V,VGS=0V
1
Zero Gate Voltage
Drain Current
IDSS
VDS=48V,VGS=0V
TJ=5℃
5
uA
On-State Drain
Current
ID(on)
VDS≧5V,VGS=10V
40
A
Drain-source On-
Resistance
RDS(on)
VGS=10V,ID=10A
VGS=4.5V,ID=8A
25
30
30
35
mΩ
Forward
Transconductance
gfs
VDS=5V,ID=6.2AV
24
S
Diode Forward Voltage
VSD
IS=1A,VGS=0V
0.8
1.2
V
Dynamic
Total Gate Charge
Qg
48
58
Gate-Source Charge
Qgs
24.2
30
Gate-Drain Charge
Qgd
VDS=30V,VGS=10V
ID≡8.2A
14.5
nC
Input Capacitance
Ciss
1920
Output Capacitance
Coss
155
Reverse
TransferCapacitance
Crss
VDS ==30V,VGS=0V
F=1MHz
116
pF
8.5
Turn-On Time
td(on)
tr
6
29
Turn-Off Time
td(off)
tf
VDS=30V,RL=3.6Ω
VGEN=3V
6
nS
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