IS61WV6416DBLLSLASHDBLS datasheet(10/21 Pages) ISSI

Il numero della parte	IS61WV6416DBLL/DBLS

Spiegazioni elettronici	64K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

PDF	21 Pages

Scroll/Zoom	100%

Produttore elettronici	ISSI [Integrated Silicon Solution, Inc]

Homepage	http://www.issi.com

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Integrated Silicon Solution, Inc. — www.issi.com

Rev. A

11/18/2010

IS61WV6416DALL/DALS, IS61WV6416DBLL/DBLS,

IS64WV6416DBLL/DBLS

READ CYCLE SWITCHING CHARACTERISTICS(1) (OverOperatingRange)

-20 ns

-25 ns

-35 ns

-45 ns

Symbol

Parameter

Min. Max.

Min.

Max.

Unit

trc

ReadCycleTime

20—

25—

35—

45—

tAA

AddressAccessTime

—20

—25

—35

—45

toHA

OutputHoldTime

2.5—

6—

8—

10—

tAce

AccessTime

—20

—25

—35

—45

tdoe

AccessTime

—8

—12

—15

—20

tHzoe(2)

toHigh-ZOutput

010

tLzoe(2)

toLow-ZOutput

0—

—

tHzce(2

toHigh-ZOutput

010

tLzce(2)

toLow-ZOutput

3—

10—

tbA

,UBAccessTime

—8

—25

—35

—45

tHzb

,UBtoHigh-ZOutput

010

tLzb

,UBtoLow-ZOutput

0—

—

Notes:

1. Testconditionsassumesignaltransitiontimesof1.5nsorless,timingreferencelevelsof1.25V,inputpulselevelsof0.4Vto

Vdd-0.3VandoutputloadingspecifiedinFigure1a.

2. TestedwiththeloadinFigure1b.Transitionismeasured±500mVfromsteady-statevoltage.Not100%tested.

3. Not100%tested.

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