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IS61WV12816DALL/DALS Scheda tecnica(PDF) 6 Page - Integrated Silicon Solution, Inc

Il numero della parte IS61WV12816DALL/DALS
Spiegazioni elettronici  128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
PDF  21 Pages
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Produttore elettronici  ISSI [Integrated Silicon Solution, Inc]
Homepage  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc

IS61WV12816DALL/DALS Scheda tecnica(HTML) 6 Page - Integrated Silicon Solution, Inc

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Integrated Silicon Solution, Inc. — www.issi.com
Rev. D
06/21/2011
IS61WV12816DALL/DALS, IS61WV12816DBLL/DBLS,
IS64WV12816DBLL/DBLS
ABSOLUTE MAXIMUM RATINGS(1)
Symbol
Parameter
Value
Unit
VTERM
Terminal Voltage with Respect to GND
–0.5 to VDD + 0.5
V
VDD
VDD Relates to GND
–0.3 to 4.0
V
TSTG
Storage Temperature
–65 to +150
°C
PT
Power Dissipation
1.0
W
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage
to the device. This is a stress rating only and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
CAPACITANCE(1,2)
Symbol
Parameter
Conditions
Max.
Unit
CIN
Input Capacitance
VIN = 0V
6
pF
CI/O
Input/Output Capacitance
VOUT = 0V
8
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: TA = 25°C, f = 1 MHz, VDD = 3.3V.



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